摘要
本文对有源区条宽100μm的GaAsP/AlGaAs808nm量子阱激光器分别限制结构进行了理论分析和设计.选取了三种情况的波导层和限制层的铝组分,分别计算和分析了波导层厚度与激光器光限制因子、最大出光功率、垂直发散角和阈值电流密度的函数关系.根据计算结果可知:当波导层和限制层铝组分为0.4和0.5时,采用窄波导结构可以获得器件的最大输出功率为11.2W,发散角为19°,阈值电流密度为266A/cm2;采用宽波导结构可以得到器件的最大输出功率为9.4W,发散角为32°,阈值电流密度为239A/cm2.
Separate-confinement heterostructures（SCH） of 100μm-wide-stripe GaAsP/AIGaAs quantum-well lasers emitting at a wavelength of 808nm are analyzed and designed theoretically. Choosing three cases of Al-content of the waveguide layer and the cladding layer, we calculate and analyze the dependences of the optical confinement factor, maximal output power, vertical divergence angle, and threshold current density on the thickness of the waveguide layer. Calculated results show that when the Al content of the waveguide and cladding layers are 0.4 and 0.5 respectively, a maximal output power of 11.2W, vertical divergence angle of 19°,and threshold current density of 266A/cm^2 can be achieved by adapting narrow waveguide layers; further,a maximal output power of 9.4W,vertical divergence angle of 32°,and threshold current density of 239A/cm^2 can be obtained by adapting broad waveguide layers.
