摘要
1980年第15届国际半导体物理会议上,日本物理学家植村泰忠曾预言半导体物理研究的对象将从晶态转向非晶态,以体内转向表面,从天然存在的材料转向人工设计的材料,对半导体中缺陷的研究将从浅能级转向深能级。对稳态过程的研究逐步转向对瞬态的研究。将近十年的工作大致是沿着他的预测发展的。在异质结构、量子阱、表面和界面,半导体中的缺陷以及非晶态半导体等领域的理论和实验研究都有些饶有兴趣的结果。
Examples oa currant understanding of some major defects in H-V compound semiconductors as wall as in silicon, and on studies of semiconductor surfaces and interfaces by using synchrotron radiation and atom resolved scanning tunneling microscope will be given. Due to the significant progress made in ths heteroapitaxy of both lattice matched and lattice mismatched strain systems, a rich variety of new materials are now available. The impact of such progresses on fundamental understanding of semiconductor physics and on the development of novel devices will be discussed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1989年第4期351-352,共2页
Research & Progress of SSE
