摘要
建立了半导体温差发电器件的基本模型;从稳态的热传导方程出发,对发电器件进行了热力学分析,推导出P型和N型半导体内部的温度分布函数及输出功率和发电效率的表达式;测定了一种Bi-Te-Sb-Se半导体热电材料在低温下的塞贝克系数随温度的变化关系,绘制了曲线并进行数值拟合;结果表明,该种半导体热电材料在低温下性能不佳,需改进配方或生产工艺方可使用。
A basic model of semiconductor thermoelectric generator is constituted. Based on the steady conduction equation, thermodynamic process has been analyzed. Temperature function, output power and generating efficiency of p and n semiconductor are obtained. The Seebeck coefficient S of a kind of Bi-Te-Sb-Se thermoelectric material at low temperature has been experimentally researched. Based on the experiment, the function between S and T of this material has been expressed. The conclusion indicates that this kind of thermoelectric material is unsuitable for power generation at low temperature, and only the enhancement of production technology or appearance of new production method can improve the electrical power generation performance.
出处
《中国工程科学》
2005年第12期31-34,共4页
Strategic Study of CAE
基金
863计划资助项目(2002AA515010)
关键词
半导体
温差发电
热力过程
塞贝克系数
semiconductor
thermoelectric
thermodynamic process
Seebeck coefficient
