摘要
测量了掺锗ＣＺＳｉ中锗的纵向分布形式，发现硅中锗的分布是头部低尾部高，其有效分凝系数Ｋｅ≈０．６６±０．０１．
The distribution of impurity Ge along with the growth axis in Ge-doped CZSi was measured by ultraviolet fluorescent spectroscopy technique, and it was found that the Ge concentration varies from a high value at tail to a lower one at head of Si-crystal, which Ke is similarly equal to 0. 66±0. 01 approximately.
出处
《河北工业大学学报》
CAS
1996年第2期12-15,共4页
Journal of Hebei University of Technology
基金
国家自然科学基金
关键词
直拉硅
杂质分布
分凝系数
锗
单晶
CZSi, Distribution of impurity, Ke, Equal valency doped
