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晶界氧吸附对SrTiO_3基压敏陶瓷的作用 被引量:1

The Role of Oxygen on SrTiO_3 Based Varistor Ceramics
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摘要 研究了SrTiO3基压敏陶瓷热处理过程中氧的作用。发现SrTiO3基压敏陶瓷的压敏电压U10mA与试样的厚度无关,且随着热处理温度的升高而增大。进一步的试验表明SrTiO3基压敏陶瓷的压敏特性主要受试样表面高阻层的控制。X射线光电子能谱(XPS)的Mn2p和O1s谱图表明,表面高阻层是氧在热处理过程中通过晶界的扩散和化学吸附产生的。因此,氧在晶界处的化学吸附是SrTiO3基陶瓷压敏特性产生的根源。 The role of oxygen in the heat treatment process of SrTiO3 varistor ceramics has been investigated. It is found that the varistor voltage of SrTiO3 ceramics independent of the sample thickness, and it increases with the heat treatment temperatures increase, that the dielectric property is mainly governed by a highly resistive surface layer. The XPS results of Mn 2p and O 1s suggest that the surface layer was formed by oxygen diffusion and surface chemisorption at grain boundaries during the heat treatment in air. The chemisorption of oxygen in grain boundaries, which leads to the highly resistive surface layer, is the origin of the varistor behavior of SrTiO3 ceramics.
出处 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2005年第11期1730-1733,共4页 Rare Metal Materials and Engineering
基金 国家自然科学基金资助项目(50307010)
关键词 SrTiO3陶瓷 晶界 压敏电阻 SrTiO3 ceramics grain boundary varistor
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