摘要
High dielectric constant (high-k) materials are vital to the nanoelectronic devices. The paper reviews research development of high-k materials, describes a variety of manufacture technologies and discusses the application of the gate stack systems to non-classical device structures.
High dielectric constant （high-k） materials are vital to the nanoelectronic devices. The paper reviews research development of high-k materials, describes a variety of manufacture technologies and discusses the application of the gate stack systems to non-classical device
出处
《广东有色金属学报》
2005年第2期42-48,共7页
Journal of Guangdong Non-Ferrous Metals
关键词
二氧化硅
电介质
绝缘体
绝缘材料
dielectric constant
gate stack
alternative materials
