摘要
采用射频(RF)磁控溅射在Pt/Ti/SiO2/Si(100)衬底上制备了Ba0.6Sr0.4TiO3(BST)薄膜。通过研究BST薄膜的电容-偏压(C-V)特性曲线发现,溅射过程中的离子注入引起底电极/铁电薄膜界面处产生了过渡层,从而导致C-V曲线不对称。最后我们通过改进溅射工艺对这一机理进行了实验验证。
Ba0.6Sr0.4TiO3 thin films were prepared by RF magnetron sputtering system on Pt/Ti/SiO2/Si（100） substrates. It is found that the asymmetry of the C-V curves was due to the transition layers （between Pt bottom electrode and Ba0.6 Sr0.4 TiO3 thin film） caused by the ion implantation during sputtering process. Moreover, this mechanism was validated by our experimental results.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2005年第11期1704-1705,1708,共3页
Journal of Functional Materials
基金
国家重点基础研究发展计划(973计划)项目
关键词
钛酸锶钡
薄膜
C-V曲线
不对称
界面
barium strontium titanate
thin film
C-V curve
asymmetry
interface
