摘要
利用物理气相沉积方法,在S i衬底上制备了CdT e纳米线和纳米晶.X射线衍射(XRD)和扫描电子显微镜(SEM)研究表明所得产物为四方结构CdT e.CdT e纳米线的直径约20nm,长度约为几个微米,纳米晶粒径约为100 nm.分析了载流气体流速、温度等因素对过饱和度的影响,进而影响低维纳米材料的形貌结构.
CdTe nanowires and nanocrystals were grown on the silicon substrates via physical vapor deposition. X-ray diffraction and scanning electron microscopy images show that the final products were tetragonal CdTe nanowires,which were about 20nm in diameter and up to several micrometers in length. The CdTe nanocrystals were about 100nm. We investigate the influence of substrate temperature and the flow rate of Ar on the degree of the super saturation,which affect the prevailing growth morphology of the low-dimension nanomaterial.
出处
《新疆大学学报（自然科学版）》
CAS
2005年第4期425-429,共5页
Journal of Xinjiang University(Natural Science Edition)
基金
国家自然科学基金资助项目(50062002)
