摘要
初步分析了基于GaAs/AlGaAs量子阱材料的光致折射率变化规律,利用自洽方法计算了光生载流子浓度对传输光的折射率改变量。当805nm的控制光注入强度为6×103W/cm2(8×103W/cm2)时,在垂直材料表面内1μm深度处,对1.55μm(1.31μm)的传输光可以达到-1-0 2的折射率变化量级。与GaAs体材料相比,量子阱材料所需控制光强度能够减少约20%,有助于降低全光开关与全光调制器的功耗。
The primary analysis of photon-induced refractive index change based on GaAs/AlGaAs quantum wells materials is presented in this paper. The effect of photon-excited carriers were treated self-consistently. For transmitting light at 1.55μm （1.3μm）, An can reach -10^-2 at 1μm depth along z axes when the power density of controlling light （805nm） is 6 × 10^3W/cm^2 （8 × 10^3W/cm^）. Compared with the model based on GaAs bulk materials, the model based on quantum wells materials can reduce the controlling power density by about 20% to reach the same photon-induced refractive index change, and also decrease the controlling power consumption for all-optical switches and all-optical modulators.
出处
《光学仪器》
2005年第5期136-140,共5页
Optical Instruments
基金
国家自然科学基金资助项目(60477018)
国家自然科学基金重点资助项目(60436020)
关键词
集成光学
全光开关
光致折射率
量子阱材料
integrated optics
all optical switches
photon-induced refractive index
quantum wells materials
