摘要
（Ａｌ．Ｇａ）Ａｓ－ＧａＡｓ高电子迁移率晶体管（ＨＥＭＴ）具有跨导大、截止频率高、噪声低、开关速度快以及功耗低等特点。是一种比ＭＥＳＦＥＴ优越的新型器件。在器件模拟这一领域，已经发展了一维分析模型、二维数值模型或半数值模型以及针对小尺寸器件的ＭｏｎｔｅＣａｒｌｏ模型。对部分一维和二维器件模型作了综合介绍和分析。
The GaAs high electron mobility transistor(HEMT), featuring high transconductance, high cut-off frequency, high switching speed, low-noise and low power dissipation,is a kind of new device superior to MESFET's. For its device modeling, 1-dimensional analytical models, 2dimensional numeric or semi-numeric models and Monte Carlo models for small feature size device have been developed in recent years. Some of these models are examined and analyzed.
出处
《微电子学》
CAS
CSCD
1996年第2期107-111,共5页
Microelectronics
