摘要
利用电沉积方法制备出CuInGaSe2薄膜,对制备的薄膜硒化退火以提高薄膜的化学计量比。通过X射线能量色散谱仪(EDS)、X射线衍射(XRD)、扫描电镜(SEM)以及四探针方法对制备的薄膜进行组成成分、微观结构、表面形貌和导电类型进行分析,结果表明制备的薄膜具有黄铜矿结构,颗粒均匀,具有较高的光吸收系数,导电类型均为n型。
CuInGaSe2（CIGS） thin films were fabricated by electrodeposition and a thermal processing in Se atmosphere at 450 ℃ , which was carried out to improve the stoichiometry. The selenized films were characterized by energy dispersive spectroscopy （EDS）, X-ray diffraction （XRD） ,scanning electron microscopy （SEM） and four-point probe. The results indicated that CIGS thin films have the chalcopyrite structure, homogeneous grain, high absorption coefficient and n-type conduction.
出处
《武汉理工大学学报》
EI
CAS
CSCD
北大核心
2005年第10期1-3,共3页
Journal of Wuhan University of Technology
基金
国家"863"项目(2002AA335030)
