摘要
基于已经得到的实验结果的分析，本文较详细地讨论了低压化学气相沉积（ＣＶＤ）金刚石薄膜过程中，衬底负偏压对金刚石成核的增强效应，明确阐述了负偏压增强成核的作用机理，并且讨论了这种效应作为提高金刚石在非金刚石衬底表面成核密度的一种方法所具有的优点以及存在的不足。
Abstract In the present paper, based on the analysis of the obtained experiment results, the effect of negative bias--enhanced nucleation in diamond films growth by low pressure CVD methods has been discussed, and the mechanism of the effect of negative bias-enhanced nucleation has been suggested. Finally, the advantages of the method of bias-enhanced nucleation on the non-diamond substrates have been put forward.
出处
《真空》
CAS
北大核心
1996年第1期30-34,共5页
Vacuum
