摘要
介绍了GaN材料的基本特性及重要意义,讨论了在Si衬底上外延GaN的可取之处以及存在的主要问题。详细阐述了各种不同材料以及不同结构的缓冲层应用于MOCVD方法在Si衬底上外延GaN,及其所取得的最新成果。对缓冲层降低应力的机制进行了说明。
The characteristics and the great importance of GaN were introduced. The advantages and the main problems of GaN grown Si substrate have been explained. Also, various buffer materials and buffer structures used in the growth of GaN by MOCVD system were expounded. Finally the machnisms of the the buffer＇s decreasing the strain were discussed.
出处
《光电子技术与信息》
CAS
2005年第5期20-25,共6页
Optoelectronic Technology & Information
基金
国家科技攻关计划资助项目(00-068)
