摘要
用半导体量子点的PLE谱分析了光吸收谱的亚结构.用光吸收谱,光致发光谱(PL)和光致发光激发光谱(PLE)对半导体CdSeS量子点玻璃进行了测量.光吸收谱线有明显的量子尺寸效应.PL谱中出现2个发光峰.用PLE谱在光吸收谱的低能侧峰附近探测,发现光吸收谱的低能侧峰附近存在2个峰,其能量间距随着量子点半径的增大而减小,说明了光吸收谱的低能侧峰存在亚结构.证明了PL谱中低能侧峰为缺陷态发光,该峰的PLE谱线说明了该峰的发光来源于1S3/2-1se和2S3/2-1se2能态的电子,甚至更高能态电子的弛豫.
The sub-structure in the absorption spectra of semiconductor quantum dots （QDs） is analyzed by means ofphotoluminescence excitation spectra in this paper. The semiconductor CdSeS quantum dots imbedded in glass are analyzed by means of absorption spectra, PL spectra and PLE spectra. The absorption spectra show obvious quantum-size effect. There are two peaks in the PL spectra. At the lower energy peak of the absorption spectra where using PLE detect, there are two peaks can be found, and the energy space between them diminishes with the increase of radius of QDs. It can indicate that sub-structure exists about the lower energy peak of the absorption spectra. The lower energy peak of PL spectra is induced by the defect states of QDs. The PLE spectra that detect at the energy of the peak also can indicate that the relation of 1 S3/2-1 se, 2S3/2-1 se and a higher energy state is the main cause of the defect state.
出处
《装甲兵工程学院学报》
2005年第3期76-78,共3页
Journal of Academy of Armored Force Engineering
