摘要
采用转移矩阵和数值计算相结合的方法求解含时Schrdinger方程,计算了电子在双势垒结构中的构建时间和隧穿寿命.结果表明:构建时间和隧穿寿命对于描述电子隧穿时间特性同等重要.通过研究隧穿时间对结构参数的依赖情况发现,隧穿寿命随阱宽和垒厚的增加而迅速增大.
The time-dependent SchrOdinger equation is numerically solved by the combing transfer matrix and the Runge-Kutta method. The temporal evolution of the wave functions and tunneling time are discussed within a GaAs-AlxGa1-xAs double barriers structure. It indicates that the build-up time cannot be ignored in comparison with the tunneling lifetime for the small system case. Furthermore, the tunneling lifetimes are studied as the functions of the structure parameters. It is also found that the tunneling lifetime increases monotonously with the well width and the barriers thickness.
基金
国家自然科学基金(批准号:10164003)
内蒙古大学青年科技基金(批准号:ND0206)资助项目~~
关键词
双势垒
共振隧穿
寿命
double barrier heterostructure
resonant tunneling
lifetime
