摘要
AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs double-barrier resonant tunneling diodes （DBRTDs） grown on a semi-insulated GaAs substrate with molecular beam epitaxy is demonstrated. By sandwiching the In0.1 Ga0.9 As layer between GaAs layers, potential wells beside the two sides of barrier are deepened, resulting in an increase of the peak-to-valley current ratio （PVCR） and a peak current density. A special shape of collector is designed in order to reduce contact resistance and non-uniformity of the current;as a result the total chrrent density in the device is increased. The use of thin barriers is also helpful for the improvement of the PVCR and the peak current density in DBRTDs. The devices exhibit a maximum PVCR of 13.98 and a peak current density of 89kA/cm^2 at room temperature.
在半绝缘GaAs衬底上制作了AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs双势垒共振隧穿二极管.在GaAs层中加入In0.1Ga0.9As层用以降低势垒两边的势阱深度,从而提高了器件的峰谷电流比和峰电流密度.为了减小器件的接触电阻和电流的非均匀性,使用了独特形状的集电极,总的电流密度也因此提高.薄栅也有助于提高器件的PVCR和峰电流密度.在室温下测得其峰谷电流比高达13.98,峰电流密度大于89kA/cm2.
基金
国家自然科学基金资助项目(批准号:60236010)~~
