摘要
采用求泊松方程、电流密度方程、载流子扩散方程以及有源层结压降方程自洽解的方法,计算了不同台面大小的台面结构垂直腔面发射激光器内部的电势分布和有源层中的注入电流密度、载流子浓度及结压降分布。结果表明,台面尺寸对垂直腔面发射激光器内部的电势分布和有源层中的注入电流密度、载流子浓度及结压降分布有重要影响。在一定的外加电压下,随着台面尺寸减小,有源层中心处的注入电流密度、载流子浓度和结压降急剧减小,垂直腔面发射激光器性能恶化。
The voltage distribution inside the etched mesa vertical-cavity surface-emitting laser（VCSEL） with various mesa size and the radial distribution of the injected current density, carrier density,and voltage drop in the active layer are calculated by using a method of finding self-consistent solutions for the Poisson＇s, injected current density, carrier diffusion and voltage drop equations. The calculated results show that the mesa size of the top mirror strongly influences the voltage distribution inside the VCSELs and the radial distribution of the injected current density, carrier density, and voltage drop in the active layer. Under a certain applied voltage,the injected current density, carrier density and voltage drop in the center of the active layer decreases greatly with decreasing mesa size, respectively, and the property of the VCSELs will deteriorate.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2005年第5期378-381,共4页
Semiconductor Optoelectronics
基金
国家高技术研究发展计划资助项目(2001AA312180)
关键词
垂直腔面发射激光器
台面尺寸
电势分布
电学特性
有限差分法
vertical-cavity surface-emitting laser
mesa size
voltage distribution
electrical characteristics
finite difference method
