摘要
用两套γ谱仪精确测量了注入到天然铍和天然金中的7Be发生电子俘获的半衰期。实验测得,天然铍中7Be的半衰期为53.275(25)d,在天然金中为53.270(19)d。在0.12%的实验测量精度下,未观测到7Be半衰期在这两种材料中的差异。结果表明:注入在不同材料中7Be半衰期的变化不能仅从被注入材料的电子亲合势的差异考虑,还要考虑材料晶格结构的影响。
The half-life T1/2 of ^7Be implanted in natural beryllium and natural gold has been measured using two coaxial high-purity germanium detectors to be 53. 275 （25） d and 53. 270（19） d, respectively. No difference in the half-life of ^7Be in the host media beryllium and gold is observed within measurement uncertainty of 0.12%. This result implies that the change of the decay rate of ^7Be implanted in different materials can not be simply expected from the electron affinity difference consideration alone and the lattice structure of the host materials should be taken into account.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2005年第5期390-394,共5页
Atomic Energy Science and Technology
基金
国家自然科学基金资助项目(10305020)
关键词
电子俘获
半衰期
电子亲合势
晶格结构
electron capture
half-life
electron affinity
lattice structure
