摘要
研究T a2O5对(S r,B i,S i,T a)掺杂的T iO2基压敏陶瓷半导化的影响,发现随着T a2O5增加,晶粒电阻呈现“U”字型变化规律,按照配方T iO2+0.3%(S rCO3+B i2O3+S iO2)+0.1%T a2O5(摩尔分数)配制的样品的晶粒电阻最小,这表明适当增加施主T a2O5的含量有助于材料晶粒的半导化。
The semi-conductivity properties of （Sr, Bi,Si, Ta）-added TiOz-based varistor with various Ta2O5 dopants were investigated. It was found that grain resistance increase first and then decrease accompanying Ta2O5 contents , increase. A sample which with added components of TiO2＋ 0.3%（SrCO3 ＋Bi2O3＋SiO2 ） ＋0.1% Ta2O5 displayed minimum grain resistance. The resuled indicated that Ta2O5 contents, increase contribute to the semi-conductivity of （Sr,Bi,Si,Ta）-added TiO2-based varistor.
出处
《压电与声光》
CSCD
北大核心
2005年第5期554-556,共3页
Piezoelectrics & Acoustooptics
基金
安徽省教育厅科研基金资助项目(2005KJ224)
安徽大学教学研究基金资助项目(X200521)
安徽大学信息材料与器件重点实验室基金资助项目
关键词
TiO2基压敏陶瓷
压敏电压
非线性系数
电容量
晶粒电阻
半导化
TiO2-based varistor
breakdown voltage
nonlinear exponent
electric capacity
grain resistance
semi- conductivity
