摘要
文章将相关积分方法用于MOSFET 1/f噪声分析,发现器件的1/f噪声与RTS叠加模型产生的1/f噪声相关积分极其相似。通过对MOSFET噪声物理模型的分析和讨论,证明n-MOSFET的1/f噪声以载流子数涨落模型为主,p-MOSFET的1/f噪声以迁移率涨落模型为主结论的正确性。研究表明,相关积分方法可用于鉴别电子器件测量噪声所属的模型类型。
The correlation integral method is used to analyze 1/f noise in MOSFET＇ s. It is found that the device noise is similar to 1/f noise from RTS superposition model. Through the discussion and analysis of the physical noise model of MOSFET＇s, the conclusion that the number fluctuation is dominant in n-MOS device and the mobility fluctuation is dominant in p-MOSFET is validated. It has been shown that this approach can be used to distinguish the types of the noise model for electronic devices.
出处
《微电子学》
CAS
CSCD
北大核心
2005年第5期517-520,共4页
Microelectronics
基金
国家自然科学基金资助项目(60276028)
部委基金资助项目
