摘要
应用中频感应提拉法生长出不同掺杂浓度的Yb∶FAP激光晶体。运用电感耦合等离子体原子发射光谱仪(ICP-AES)测定了Yb3+离子在Yb∶FAP晶体中的分凝系数约为0.03。随着晶体的生长,晶体中Yb3+离子的轴向浓度逐渐增大。研究Yb∶FAP晶体在77 K和300 K温度下的吸收光谱发现,振动谱的变化主要是由电子-声子近共振耦合作用引起的。系统地研究了不同Yb3+离子掺杂浓度Yb∶FAP晶体的吸收光谱和荧光光谱。通过吸收光谱的测量计算了晶体的吸收截面。Yb∶FAP晶体在904 nm和982 nm处存在Yb3+离子的两个吸收带,适合激光二极管抽运。
Yb： FAP crystals with different Yb^3＋ ions dopant concentrations have been grown hy Czochralski method. The segregation coefficient of Yb^3＋ ions in Yb： FAP crystal detected by inductively coupled plasma atomic emission ,spectrometry （ICP-AES） method is equal to 0.03. The axial distribution of Yb^3＋ concentration increases gradually with the crystal growth. Experimental results of the absorption spectra of Yb： FAP crystals at 77 K and 300 K have been reported in the paper. There are obvious vibronic peaks in the spectra of Yb： FAP crystal owing to the near resonance effects of electron-phonon coupling. The absorption spectra and fluorescence spectra of Yb： FAP crystals with different doped Yb2O3 concentrations have been measured at the room temperature. The spectroscopic parameters of Yb： FAP crystals have been calculated according to the absorption spectra. Two absorption bands are centered at 904 nm and 982 nm of Yb^3＋. respectively, which are suitable for InGaAs diode laser pumping.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2005年第10期1433-1436,共4页
Chinese Journal of Lasers
基金
国家863计划(2002AA311030)资助项目
关键词
材料
Yb:FAP晶体
提拉法
分凝系数
光谱特性
materials
Yb： FAP crystals
Czochralski method
segregation eoefficient
spectral performance
