摘要
在室温条件下采用直流反应磁控溅射法制备了新型透明导电In2O3:Mo薄膜.研究了溅射压强中氧气百分含量[P(O2)]为8.0%～18.0%时对薄膜光电特性以及表面形貌结构的影响.结果表明,薄膜的光电性能对溅射压强中P(O2)非常敏感.分析显示P(O2)决定了薄膜中的氧空位含量和载流子浓度,从而影响了薄膜的光电特性.原子力显微镜观察表明,适量的P(O2)条件下可以获得平均粗糙度为0.3 nm、颗粒均匀、表面平整的薄膜.室温制备的IMO薄膜在可见光区域的平均透射率(含玻璃基底)高达82.1%,电阻率低至5.9×10-4 Ω·cm.
A novel type of transparent conductive oxide thin film of molybdenum-doped indium oxide（IMO） was prepared by DC reactive magnetron sputtering at room temperature. The IMO films sputtered on glass microscope slides with good optical and electrical properties of an electrical resistivity of 5.9 × 10^-4 Ω. cm and an average visible transmission about 82.1% were obtained at appropriate oxygen partial pressure.The analysis reveals that oxygen partial pressure influences the oxygen vacancies and the carrier concentration in the films, and changes the optoelectrical properties of the IMO films. Atomic force microscope evaluation indicates that the IMO films show uniform grain size and smooth surface with the average roughness of 0.3 nm.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2005年第4期301-305,共5页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金(No.603760010)
关键词
透明导电氧化物
In2O3:Mo薄膜
直流反应磁控溅射法
室温
Transparent conductive oxide, Molybdenum-doped indium oxide films,DC reactive magnetron sputtering, Room temperature
