摘要
通过对硅晶片化学机械抛光过程中抛光运动机理的理论分析,研究了硅晶片的抛光运动特性,探讨了主要工艺参数对硅晶片化学机械抛光后晶片表面粗糙度和表面平整度、抛光均匀性的影响规律。
The characteristic of silicon wafer polishing motion is researched in this paper by theoretic analysis of polishing motion mechanism during silicon wafer CMP, and discuss the mechanism of silicon wafer CMP, Systematically analyze the effect of the main process parameters for surface roughness, flatness and uniformity of wafer post-CMP.
出处
《电子工业专用设备》
2005年第9期37-41,共5页
Equipment for Electronic Products Manufacturing
