摘要
用真空蒸发法在玻璃衬底上制备了PbI2多晶薄膜,对样品的微结构、表面形貌、化学组分及电阻率进行了测试分析.结果表明,样品具有良好的多晶结构,并沿六角密堆积结构的c轴向高度择优取向.室温下样品暗电导率为3.09×10-11(Ω·cm)-1,电导激活能为0.78eV.
Lead iodide （PbI2） polycrystalline thin films were deposited on glass substrates by vacuum evaporation technique. The structure, surface morphology and composition of the films were characterized by using X-ray diffraction, scanning electron microscope, X-ray photoelectron spectrometer. The results indicate that the films are polycrystalline with a preferred orientation along （001）. The measurement of conductivity as a function of temperature shows that the dark conductivity of the film at room temperature is as low as 3.09×10^-11 （Ω·cm）^-1, and the activation energy is 0.78 eV.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第5期1239-1242,共4页
Journal of Inorganic Materials
基金
真空低温技术与物理国家级重点实验室基金(51475040103JW2301)
关键词
PbI2多晶薄膜
真空蒸发
辐射探测
polycrystalline PbI2 thin film
vacuum evaporation
radiation detect
