摘要
本文利用光电子能谱(XPS、UPS)技术研究了Pd淀积层与离子注入制备的a-Si∶H层组成的系统.本工作分析了Pd/a-Si∶H的界面键合状态及组分分布的变化对价带谱与芯能级谱的影响,并与Pd/C-Si系统的结果进行了比较.结果表明:Pd/a-Si∶H界面具有与Pd/C-Si界面相似的电子结构;但是,Pd原子在a-Si∶H中具有较大的扩散速率,因此,处于更富Si的环境中。
Using both ultraviolet and X-ray photoemission spectroscopy,Ne have studied thePd/a-Si: H system and the effects of the changes of chemical bondi.and composition at inter-faces on the electronic structure anl on the core level spectra, The results have been comparedwith that of the Pd/c-Si system. It is shown that both Pd/a-Si:H interface and Pd/c-Si interfacehave similar electronic structure and interfacial characteristic.However,Pd atoms in a-Si:Hhave higher diffusibility, and are under more Si-rich circumstance than in c-Si.
基金
中国科技大学结构分析开放实验室科研基金
关键词
金属
半导体
界面
非晶硅
硅化物
Metal-semiconductor interface
Amorphous silicon
Silicide
UPS
XPS
