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ZnS:ErF_3和ZnS:HoF_3薄膜电致发光的亮度和色度 被引量:1

BRIGHTNESS AND COLOR COORDINATES OF ZnS GREEN ELECTROLUMINESCENT THIN FILM DOPED WITH ErF_3 AND HoF_3
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摘要 研究了ZnS:ErF_3和ZnS:HoF_3两种材料制备的交流驱动的绿色电致发光薄膜(ACELTF)的发光亮度和色度与ErF_3和HOF_3掺杂浓度的关系。对于ZnS:ErF_3和ZnS:HoF_3,其最佳掺杂浓度分别为7×10^(-3)和2×10^(-3)mol/mol基质;获得的最高发光亮度分别为900cd/m^2和550cd/m^2。当ErF_3的掺杂浓度由3×10^(-4)mol/mol基质增至3×10^(-1)mol/mol基质时,ZnS:ErF_3薄膜的色座标(x,y值)由0.251,0.664变为0.392,0.586;当HOF_3的掺杂浓度由3×10^(-4)mol/mol基质增至1×10^(-1)mol/mol基质时,ZnS:HoF_3薄膜的色座标值由0.315,0.615变为0.472,0.521。 In this paper we have studied the dependence of brightness and color coordinates of ACELTF (Alternative current electroluminescence thin film) in ZnS doped with ErF_3 and HoF_3 on the activator concentrations. The result indicates that the optimum concentrations of dopant is about 7×10^(-3)mol/mol[ZnS] and 2×10^(-3)mol/mol [ZnS] for ZnS:ErF_3 and ZnS:HoF_3 ACELTF respectively. The highest brightness of 900cd/m^2, 550cd/m^2 and 2300cd/m^2 have been obtained for ZnS:ErF_3, ZnS:HoF_3 ard ZrS:TbF_3 ACELTF respectively. For ZnS:ErF_3 and ZnS:HoF_3 ACELTF devices, the EL color coordinates shift with activator concentrations. At lower concentration (ErF_3~3×10^(-4)mol/mol[ZnS], HoF_3~3×10^(-4)mol/mo[ZnS], the color coordinates of ZnS:ErF_3 and ZnS:HoF_3 ACELTF devices are x=0.251, y=0.664 and x=0.315, y=0.615, at higher concentrations (ErF_3~3×10^(-1)mol/mol[ZnS], HoF_3~1×10^(-1)mol/mol[ZnS]), the color coordinates of ZnS:ErF_3 and ZnS:HoF_3 ACELTF devices are x=0.392, y=0.586 and x=0.472, y=0.521 respectively. For ZnS:TbF_3 ACELTF device, the color coordinate is independent of the TbF_3 concentration.These results are due to concentration quenching of luminescence through the cross-relaxation processes.
出处 《中国稀土学报》 CAS CSCD 北大核心 1989年第1期23-27,共5页 Journal of the Chinese Society of Rare Earths
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  • 1李长华,发光学报,1988年,8卷,2期 被引量:1

同被引文献19

  • 1Chong Kuochu,Chang Hsinyi,Hsu Hsujung.Excitation mechanism in DC electroluminescence of Y2O3:Eu sintered slice and ZnS:Cu,Er,Cl thin film ageing and forming processes[J].J.Lumin.,1979,18/19:913-916. 被引量:1
  • 2Zhong G Z,Bryant F J.The lifetime of excited states and spectral intensities of DCEL in ZnS:Cu,Nd,Cl thin films[J].J.Phys.C:Solid States Phys.,1981,14:2175-2184. 被引量:1
  • 3Xu Xurong,Yu Jiaqi,Zhong Guozuu.The impact cross section of Er^3+ in ZnS[J].J.Lumin.,1986,36:101-107. 被引量:1
  • 4Luo Baozhu,Yu Jiaqi,Zhong Guozhu.The impact cross section of ErF3 centers in ZnS thin film[J].J.Lumin.,1988,40/41:786-787. 被引量:1
  • 5Zhoug G Z,Bryant F J.Direct current electroluminescence and spectral intensity in erbium-doped zinc sulphide thin film[J].J.Lumin.,24/25:909-912. 被引量:1
  • 6Zhong G Z,Bryant F J.Direct current electroluminescence and neodymium luminescent center in Nd-doped ZnS thin film[J].J.Phys.C.Solid State Phys.,1980,13:4797-4804. 被引量:1
  • 7Kahng D.Electroluminescence of rare-earth and transition metal molecules in Ⅱ-Ⅵ compounds via impact excitation[J].Appl.Phys.Lett.,1968,13(6):210-213. 被引量:1
  • 8LiChanghua MengLijian SongHang etal.The quenching process of electroluminescence of 2H11/2 and 4S3/2 for ZnS:ErF3 thin film[J].发光学报,1988,9(2):125-131. 被引量:1
  • 9Meng Lijian,Li Changhua,Zhong Guozhu.The effect of Er3+ concentration on alternating current electroluminescence characteristics of ZnS:ErF3 thin films[J].物理学报,1988,37(10):1619-1625 (in Chinese). 被引量:1
  • 10MengLijian ZhongGuozhu.The characteristics of ACEL in ZnS:Er3+ thin films grown by atomic layer epitaxy method (ALE)[J].发光学报,1987,8(3):226-225. 被引量:1

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