摘要
本文首次报道采用重掺杂的氢化非晶硅(n^+a-Si∶H)作发射极的硅微波双极型晶体管的制备和特性.该器件内基区方块电阻2kΩ/□,基区宽度0.1μm,共发射极最大电流增益21(V_(cB)=6V,I_c=15mA),发射极Gummel数G_B值已达1.4×10^(14)Scm^(-4).由S参数测得电流增益截止频率f_s=5.5GHz,最大振荡频率f_(max)=7.5GHz.在迄今有关Si/a-Si HBT的报道中,这是首次报道可工作于微波领域里的非晶硅发射极异质结晶体管.
This paper reports for the first time the fabrication and the characteristics of a silicon he-terojunction microwave bipolar transistor with an n^+ a-Si: H emitter.The base sheet resistanceof this device is 2 kΩ/□for 0.1μm base width. The maximum current gain is measured to be 21(V_(cx)=6V,I_c=15mA).The emitter Gummel number Gx of this device is obtained up to 1.4×10^(14)Scm^(-4). From the measured S-parameters,5.5 GHz cutoff frequency f_t and 7.5 GHz ma-ximum oscillating frequency f_(max) are obtained.This is the first reported amorphous heterojunc-tion bipolar transistor available in the microwave band up to now.
