摘要
本文研究了ＭＯＣＶＤ法淀积过程中工艺条件对ＰｂＴｉＯ３膜ｃ轴取向度的影响，探讨了ＰｂＴｉＯ３膜的生长过程，通过调节氧气流量首次在ＭｇＯ（１００）单晶衬底上淀积出ｃ轴取向的ＰｂＴｉＯ３外延膜．ＰｂＴｉＯ３外延膜的介电常数为９０；折射率为２．６４；均和单晶性能一致．
We have studied the effect of process parameters on c-axis orientation of PbTiO3 thin film and the epitaxial mechanism of c-axis oriented PbTiO3 thin film by MOCVD method. The epitaxial thin film on MgO(100) substrate with high c-axis orientation have been obtained by adjusting the oxygen flow rate. The dielectric constant and the refrative index of epitaxial PbTiO3 film is 90 and 2.64 respectively coinciding with thee of PbTiO3 Bingle Crystal.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1995年第2期225-230,共6页
Journal of Inorganic Materials
基金
863-715和攀登A资助
