摘要
单晶硅中磷离子注入的剖面透射电镜(X-TEM)及HREM研究表明:能量为150keV,剂量为1×10^(13)cm^(-2)的磷离子注入后,在未经退火时,单晶硅表面以下1100A处可产生厚度为1000A的非晶层,非晶区与单晶区的边界为粗糙界面.在非晶区两侧,存在着大量不同类型的缺陷:{311}面缺陷和{111}堆垛层错.它们分布在不同的层区内,对于非晶区而言,形成大体对称的分布状态.接近非晶区,{111}堆垛层错密度较大,远离非晶区,{311}面缺陷密度较大,深层的完整晶体中,上述面缺陷的密度均很小.
By means of cross-section transmission electron microscopy,the microstructures and de-fects in P^+ implanted Si crystals are investigated P^+ implantation with energy of 150 keV anddose of about 1×10^(15) cm^(-2) was done at room temperature,It is found that there are an amor-phous layer 110 nm below the incident surface of specimen with thickness of about 100 nm, andtwo imperfect layers which are full of various kinds of defects located symmetrically on eachside of the amorphous layer.{111} stacking faults and stacking fault tetrahetra are found nearthe amorphous layer,and {311} defects are away from the layer.The interface between theamorphous and the imperfect layers are rough.In addition,some other microdefects are foundto be randomly distributed in these two layers.But the crystalline substrate still remain perfect.
关键词
单晶硅
离子注入
堆垛层错
缺陷
Ion implantation
Stacking fault
WSS theory
HREM
