摘要
我们在MBE高掺Be的GaAs中观察到了E_g+△_0和X_1~c-Γ_(15)~v之间之间跃迁的发光,讨论了高掺杂p-GaAs的E_g+△_0与本征GaAs的差别,在10-200K温度范围研究了E_g+△_0的温度依赖关系,并对X_1~c-Γ_(15)~v这一间接跃迁过程进行了讨论.
The E_g-△_0 related and X_1~c-I_(15)~v Photoluminescence in heavily Be doped GaAsgrown by MBE are studied. The difference between heavily doped P-GaAs and in-trinsic GaAs is discussed.The temperature dependence of E_g+△_0 is studied in therange of 10-200K. The process of X_1~c-i_(15)~v indirect transition is also discussed.
关键词
光致发光
掺杂
GAAS
Heavily Doping
GaAs
Photoluminescence
