摘要
通过对射频溅射RF a-Si:F,H薄膜样品光电导随入射光的波长、光强以及温度变化的测量,定量地考察了带隙、带尾态的宽度和带隙中悬键态密度与氟含量的关系,给出了氟原子在网络中一种可能的分布形式。按照Rose模型,计算了电光导随温度的变化关系,给出了局域态分布的位置、高度、宽度以及俘获截面等参量,理论计算与实验符合较好。
The photoconductivities of amorphous Si:F, H films prepared by sputtering are measured as a function of wavelengths, intensities of incident illumination and temperature. The relationships between the band gaps. tail
widths density of states of dangling bonds and the contents of fluorine are quantitatively investigated and a possible configuration of fluorine atoms in the network in the films is proposed. In terms of the model proposed by
Rose, the change of photoconductivity with temperature is calculated. The locations, widths, peaks of localized states in gaps and the capture cross section are obtained. The results of the calculations agree with the measure-
ments.
关键词
a-Si:F
H
光电导
带隙
薄膜
a-Si: F
H films
photoconductivity
dangling bond
