摘要
采用ＴＰＲ结合ＸＲＤ定量研究了ＣｕＯ／ＣｅＯ２体系中Ｃｕ（Ⅱ）的分散状态及还原过程．结果表明：ＣｕＯ在ＣｅＯ２表面的分散容量为１．１５ｍｍｏｌ／１００ｍ２，Ｃｕ（Ⅱ）可以以高分散态Ｃｕ（Ⅱ）嵌入到表面空位中以晶相ＣｕＯ（当ＣｕＯ含量超过分散容量时）形式存在．在还原过程中首先是处于表面空位中的Ｃｕ（Ⅱ）被还原，随后晶相ＣｕＯ中的Ｃｕ（Ⅱ）进入该空位再被还原，从而导致表面边续嵌入和还原过程的发生．
TPR and XRD have been used to study the dispersion state and reduction process of Cu(Ⅱ) in CuO/CeO2 system.The results show that the dispersion capacity of CuO on CeO2 surface is about 1.15mmol/100m2,Cu(Ⅱ) exists as highly dispersed state[Cu(Ⅱ) incorporates into the surface vacant sites of CeO2] and(/or) crystalline CuO when the amount of the CuO in CuO/CeO2 system surpasses the dispersion capacity.The Cu(Ⅱ) incorporated in the surface cubic site is reduced first and then the Cu(Ⅱ) in CuO moves into the vacant site and is reduced later,so the reduction process leads to the continuous incorporation of Cu(Ⅱ) on the surface of CeO2.
出处
《南京师大学报（自然科学版）》
CAS
CSCD
1995年第2期50-53,共4页
Journal of Nanjing Normal University(Natural Science Edition)
关键词
氧化铜
氧化铈
表面化学
还原反应
氧化物催化剂
cupper oxide
cerium oxide
surface chemistry
reduction reactions
dispersion(chemical )
