摘要
以正硅酸乙酯为原料, 采用溶胶-凝胶法, 结合旋转涂胶、超临界干燥工艺在硅片上制备了纳米多孔SiO2薄膜. XRD表明薄膜为无定形态; SEM显示薄膜具有多孔网络结构, 其SiO2粒子直径为10～20 nm. 利用FTIR研究了薄膜的结构, 纳米多孔SiO2薄膜含有Si-O-Si与Si-OR结构, 呈疏水性; 该SiO2薄膜热处理后因含有Si-OH基团而呈吸水性; 用三甲基氯硅烷对热处理SiO2薄膜进行修饰可使其呈疏水性, 修饰后的薄膜在N2中温度不高于450 ℃可保持其疏水性与多孔结构.
Crack-free homogeneous nanoporous silica films on silicon wafer have been synthesized via supercritical drying of wet gel films obtained by spin-coating the polymeric silica sol, which was prepared using sol-gel method with tetraethoxysilane（TEOS） as precursor. The film is amorphous and nanoporous, and three-dimensional network, eross-linked by the primary particles whose size sdistribute between 10-20nm showed respectively by XRD and SEM micrograph. The structure of the nanoporous SiO2 thin film was studied by FTIR spectra. The SiO2 thin film was composed of Si-O-Si and Si-OR, and was hydrophobic. The film contained Si-OH and became hydrophilic after being heat-treated at 250℃ or above in air. The heat-treated SiO2 thin film becomes hydrophobic by reacting with trimethylchlorosilane（TMCS）. The TMCS-modified SiO2 thin film remains hydrophobic and can keep its nanoporous structure at a temperature lower than 450℃ in nitrogen.
出处
《光谱学与光谱分析》
SCIE
EI
CAS
CSCD
北大核心
2005年第7期1045-1048,共4页
Spectroscopy and Spectral Analysis
基金
武器装备预研项目(41312040307)基金资助
