摘要
采用射频磁控溅射方法,制备了NiFe/Cu/CoFe和CoFe/Cu/CoFe/NiO两种不同结构类型的自旋阀.当使用Ag作为镜面覆盖层时,发现当Ag厚度大约在2.0~2.4nm时,不同结构的自旋阀样品NiFe/Cu/CoFe和CoFe/Cu/CoFe/NiO的巨磁电阻(GMR)都有较大幅度的提高.对Ag(tAg nm)/NiFe(6nm)/Cu(2.2nm)/CoFe(4nm)结构自旋阀,当tAg=2nm时,样品的GMR达到3.4%;对Ag(tAg nm)/CoFe(4nm)/Cu(2.2nm)/CoFe(4nm)/NiO(70nm)结构自旋阀,当tAg=2.4nm时,样品的GMR从6.9%提高到8.3%.应用半经典理论对银覆盖层的镜面反射作用进行了解释.
Two different spin valves with NiFe/Cu/CoFe structure and CoFe/Cu/CoFe/NiO structure respectively were prepared by radio frequency magnetron sputtering method. Specular electron scatteringwith Ag coverin layers onto NiFe/Cu/CoFe and CoFe/Cu/CoFe/NiO spin valves was found to contribute to giant magnetoresistance (GMR). All of the GMR ratios increased within 2.0~2.4 nm thickness of Ag specular layer. The GMR ratios reached 3.4% for Ag (tAg nm)/NiFe (6 nm)/Cu (2.2 nm)/CoFe (4 nm)structure with 2 nm thickn Ag covering layer. For Ag (tAg nm)/CoFe (4 nm)/Cu (2.2 nm)/CoFe (4 nm)/NiO (70 nm) structure spin valves, the GMR ratios increased from 6.9% to 8.3%. The layer reflection effects of Ag covering can be explained with semi-classical theoretic model.
出处
《浙江大学学报(工学版)》
EI
CAS
CSCD
北大核心
2005年第7期1034-1037,共4页
Journal of Zhejiang University:Engineering Science
关键词
磁电子学
自旋阀三明治
巨磁电阻
镜面反射
magneto-electronics
spin valve sandwich
giant magnetoresistance
specular reflection