摘要
研究载荷水平,加卸载速率以及硼掺杂对硅多形性相转变的影响,并粗略勾画出压力诱导硅相转变图。高掺杂明显增加了非晶硅的形成范围。表明掺杂降低了晶体硅的相稳定性。初步的相变动力学分析表明,室温下这类多形性相转变很可能是通过无成分变化的相界面原子重组实现的,而不是长程或跨越一两个原子层的短程扩散。
Pressure-induced phase transformations in lightly and heavily B-doped Si wafers subjected to nanoindentation tests have been studied using Raman microspectroscopy. The effects of load levels and loading/unloading rates on the phase transformations were systematically investigated, and resultant phase transformation maps were plotted. For heavily B-doped Si, the regions in which the resulted phases are amorphous Si, and amorphous Si mixed with Si-Ⅲ and Si-Ⅻ enlarge to a wider range, suggesting that heavy B doping promotes the amorphization of Si. Preliminary analysis of phase transformation kinetics indicates that the polymorphic transformation may not be accomplished by long-range or short-range diffusion, instead, just via interfacial atom rearrangement.
出处
《材料热处理学报》
EI
CAS
CSCD
北大核心
2005年第3期1-5,共5页
Transactions of Materials and Heat Treatment
基金
日本学术振兴会Grant in AidA资助 (1 62 0 60 64)
关键词
纳米硬度实验
硅
相变
微区拉曼
nanoindentation
silicon
phase transformation
raman microspectroscopy
