摘要
利用动态掩膜湿法腐蚀技术,研究了HCl/HF/CrO3溶液对与InP衬底晶格匹配的InxGa1-xAs1-yPy(y=0,0.2,0.4,0.6)材料的腐蚀特性.对于HCl(36wt%)/HF(40wt%)/CrO3(10wt%)的体积比为x∶0.5∶1的溶液,随着x由0增加到1.25,相应的腐蚀液对In0.53Ga0.47As/In0.72Ga0.28As0.6P0.4的选择性由42.4降到1.4;通过调节腐蚀液的选择性,在In0.72Ga0.28As0.6P0.4外延层上制备出了倾角从1.35°到35.9°的各种楔形结构;当x为0.025和1.25时,相应的In0.72Ga0.28As0.6P0.4腐蚀表面的均方根粗糙度分别为1.1nm和1.6nm.还研究了溶液的组分与InxGa1-xAs1-yPy(y=0,0.2,0.4)的腐蚀速率间的关系,并对腐蚀机理进行了分析.
The etching characteristics of InxGa1-xAs1-yPy（y=0,0.2,0.4,0.6）, lattice matched to InP substrate,were studied using the dynamic etch mask technique. For solutions with HCl（36wt%） ： HF（40wt%） ： CrO3（10wt%） volume ratio of x ：0.5 ： 1 ,the selectivity decreases from 42.4 to 1.4 for In0.53 Gao0. 47 As/In0. 72 Ga0. 28 As0. 6 P0.4 with HCl/CrO3 volume ratio x increasing from 0 to 1.25. The selective etching was experimentally applied to fabricate vertical taper structures with angles ranging from 1.35° to 35.9° on the Ir0.72Ga0. 28As0.6P0. 4 epitaxial layer. Surface roughness of the etched taper is less than 1.6nm.
基金
国家自然科学基金重大项目(批准号:90201035)
国家高技术研究发展计划(批准号:2003AA312020)
国家重点基础研究发展计划(批准号:2003CB314901)资助项目~~
