摘要
为了更深入地研究半导体气敏器件的气敏－光学特性，进一步提高其性能，根据半导体气敏元件的机理及光波在导电媒质中的传播，本文在实验基础上建立了氧化物半导体气敏膜片的光学特性数学模型，导出了光通过膜片时相对透过率与膜片生长的若干主要因素的定量关系。测试表明，数学模型与实验结果吻合较好。
In order to make a throughout study of the 'gas sensing-optics' properties of semiconductor gas sensors and make improvements on the quality, according to the mechanism of semiconductor gas sensor and the propagation of light in electric medium, this paper outlines a math model of optical properties of semiconductor oxide gas sensing thin films based on experiments. It also provides the quantitative relations between the relative transmissivity and sereral primary factors of the growth of the film. Test exhibits that the math model of theory coincides well with the results of experiments.
出处
《华南理工大学学报（自然科学版）》
EI
CAS
CSCD
1995年第12期110-114,共5页
Journal of South China University of Technology(Natural Science Edition)
基金
国家自然科学基金
关键词
光透射
氧化物半导体
气敏器件
光学特性
gas sensing
optical transmission
mathematical ematical model
N-semiconductor oxide
