摘要
对用多次注入与退火技术制成的ＳＩＭＯＸ材料制备的Ｎ沟ＭＯＳＦＥＴ进行了６０Ｃｏγ射线累积剂量辐照试验，测量了不同辐照偏置条件和辐照剂量下的亚阈特性曲线和阈值电压漂移。对ＮＭＯＳ／ＳＩＭＯＸ和ＮＭＯＳＩ体硅的辐照效应作了比较，结果表明前者抗总剂量辐照性能不如后者。对引起阈值电压漂移的两个因素（氧化层电荷和界面态电荷）和提高ＮＭＯＳ／ＳＩＭＯＸ抗辐照性能的几点措施进行了讨论．
The N-channel MOSFETs fabricated on SIMOX wafers made by using multiple-implantation-and-annealing techniques are irradiated by 60Co gamma rays accumulatively. The subthreshold curves and threshold voltage shifts after irradiation at different bias conditions and doses are measured.The irradiation effects are compared with those of NMOS fabricated on bulk silicon, showing that the total dose radiation tolerance of the former is inferior to the latter.The effects of trapped-oxide charge and interface traps on the threshold voltage shifts,and some methods to improve the radiation hardness of NMOS/SIMOX are discussed.
出处
《核技术》
CAS
CSCD
北大核心
1995年第6期368-373,共6页
Nuclear Techniques
