摘要
建立了半导体激光器电光取样系统。选择１．３μｍ，ＩｎＧａＡｓ增益开关半导体激光器作为取样光源，利用微带ＧａＡｓ衬底的纵向电光效应作为电光取样器，测量了ＩｎＧａＡｓ／ＩｎＰ雪崩二极管的脉冲响应特性。分析表明，本系统具有０．３５ｍ的电压灵敏度和９ｐｓ的时间分辨率。
A direct electro-optic sampling system is set up. A gain-switched InGaAsPinjection laser is used as the source of sampling and a sampler utilizing the longitudinalelectro-optic effect in GaAs substrate of microstrip line was built. The impluse responseof a InGaAs/InP photo-detector of 0. 35 mV/He sensitivity and 9 ps time reolution aredemonstrated.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1995年第7期927-930,共4页
Acta Optica Sinica
关键词
电光取样
超短电脉冲测量
半导体激光器
electro-optic sampling, ultra fast electrical pulse measurement, samplingtechnology.
