摘要
为研究ＺｎＳｅ中的本征缺陷和Ａ１在ＺｎＳｅ中的深能级行为，首先测量了Ｚｎｓｅ单晶体中的深能级，发现只存在Ｅｅ－０．３３ｅＶ一个电子陷阱．然后，通过热扩散的方法，在３００℃～７００℃温度范围内把Ａ１掺杂到ＺｎＳｅ单晶体中，结果发现存在Ｅｅ－０．３３ｅＶ和Ｅｅ－０．７０ｅＶ两个电子陷阱．本文从缺陷化学角度对ＺｎＳｅ中的本征缺陷和Ｅｅ－０．７０ｅＶ深能级的结构及起源进行了讨论．
In order to study on the intrinsic defects and behavior of Al in ZnSe,the deep levelswere detected by DLTS in the range of 300-700'C.Experimental results show that thedeep level located at Ec-0.33eV exists in both ZnSe and ZnSe:A1,Ec-0.70eV only in ZnSe:A1.Former is thought to be caused by Vse or Zni,the later by VseAIAn.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1995年第4期312-316,共5页
Chinese Journal of Luminescence
