摘要
本文研究了电子辐照在氮保护气氛中生长的直拉硅单晶中引入的深能级。没有发现可检测的与氮有关的深能级。
The deep levels in electron irradiated CZ silicon single crystal grown in pure nitrogen protective atmosphere has been studied. It is pointed out that there is no measurable deep level related to nitrogen.
基金
高纯硅国家重点实验室基金
关键词
电子辐射
微氮直接硅单晶
深能级
Electron irradiation, Slightly N-doped silicon, Deep level
