摘要
深入研究了a-Si/a-Si/a-SiGe三结叠层通讯卫星电池的制备技术.为了提高叠层电池的转换效率,提出改善n/i界面特性的缓冲层技术和高光敏性a-SiGe:H(F)薄膜的高氢气稀释比、低反应气压的淀积技术.通过工艺优化,研制出了AM1(100mW/cm^2)光照下转换效率为11.5%的a-Si/a-Si/a-SiGe三结叠层太阳电池.
The fabrication technology of high efficiency a-Si/a-Si/a-SiGe triple-junction solar cells have been investigated in detail. Some techniques were suggested to raise the conversion efficiency of solar cells,including the insertion of n- type a-Si:H buffer layer between the n/i interface to improve the interface, and using the high H2 dilution ratio and low deposition pressure to prepare the high photo-sensitive a-SiGe:H(F)film. By the optimum of the proceeding condition, the a-Si/a-Si/a-SiGe triple-junction solar cells with conversion efficiency of 11. 5% have been obtained under AMl(100mW/cm2)illumination0
出处
《电源技术》
CAS
CSCD
北大核心
1995年第2期21-25,46,共6页
Chinese Journal of Power Sources