摘要
描述一种新的注入逻辑,即纵向注入逻辑,在这种逻辑中,对器件的结构作了特殊的设计以取得高封装密度和低功耗-延时乘积。普通注入逻辑(I ̄2L)的横向PNP注入极被纵向结构所代替。对于在I ̄2L中影响封装密度和功耗-延时乘积的因素进行了分析,并且给出了这种新结构的设计依据。
A novel form of integrated injection Logic is described,in which the device structurehas been designed specifically for high packing density and low power-delay product。The lateral PNP injector of conventional I ̄2L has been replaced by a verticalarrangement.Factora affecting packing density and power-delay product in I ̄2L are an-alyzed and design considerations for the new structure are given。
出处
《暨南大学学报(自然科学与医学版)》
CAS
CSCD
1995年第3期35-39,共5页
Journal of Jinan University(Natural Science & Medicine Edition)
基金
美国印第安那大学合作项目
关键词
纵向注入逻辑
封装密度
逻辑电路
集成注入逻辑
vertical injection logic,power-delay product,packing density,schottkybarrier structure,lateral PNP injector