摘要
本文提出一种测定具有高晶格失配率的异质结带偏移的新方法．利用Ｃ－Ｖ测量技术，估计了晶格失配和其它集中电容对ｎ－ｐｂＴｅ／Ｐ－Ｓｉ异质结内建电势的影响．在用适当方法剔除了由其它集中电容引起的测量误差后，所得内建电势差修正值接近理想ＨＪ的计算值。基于此修正值，计算的带偏移△Ｅｖ和△Ｅｃ十分接近国外文献所报导的结果。
In the paper we report a new method for the determination of the band discontinuities,△Ev and △Ec, of hetrojunction(HJ)having a high lattice mis-match. We estimated,by use of C-V measurement,the effect to the built-in potentialof n-pbTe/p-Si HJ from lattice mismatch and other centralized capacitances.Afterthe measurement error caused by other centralized capacitances were eliminated the re-vised value of built-in potential difference approach to the computed value of the idealHJ.Based on the revised value,the computed band disontinuities,△Ev and△Ec.arevery close to the reported results in document abroad.
出处
《辽宁大学学报（自然科学版）》
CAS
1995年第2期31-34,共4页
Journal of Liaoning University：Natural Sciences Edition
关键词
热壁外延
带偏移
半导体
碲化铅
硅
异质结
Hot wall epitaxy,Lattice mismatch,Built-in potential,Band disconti-nuities.
