摘要
采用等离子体增强化学气相沉积(PECVD)法在普通玻璃衬底上制备了多晶硅(p-si)薄膜。利用拉曼(Raman)散射谱、原子力显微镜(AFM)研究了衬底温度、射频功率和SiH4浓度对薄膜晶化的影响,并对其结果进行分析讨论。研究结果表明,当衬底温度从200℃逐渐提高到400℃、SiH4浓度从5%降到1%,硅膜的晶化率逐渐提高,结构逐渐由非晶向多晶转变,射频功率对薄膜的晶化状况也有很大影响。
The poly-crystalline silicon thin films were deposited on common glass substrates by using the PECVD (Plasma-enhanced chemical vapor deposition) method. The effect of sub- strate temperature, RF power and SiH4dilution on the film crystalization were investigated by means of laser Raman scattering (LRS) and atomic force microscopy (AFM). The results show that, when the temperature is increased from 200℃to 400℃or the SiH4dilution is decreased from 5% to 1%, the volume fractions of P-Si in films become larger and the transition from amorphous to poly-crystalline begins. The amorphous film gradually transfers into poly-crys- talline. Moveover,the RF power also heavily affects the crystalline volume in the films.
出处
《光散射学报》
2005年第2期142-147,共6页
The Journal of Light Scattering
