摘要
本文是为建立一个更合理异质结模型所作努力的第三篇文章:提出了一种不采用“耗尽层近似”和“准平衡近似”而单独求解异质结Poisson方程的新方法,为异质结空间电荷区性能设计提供了一个严格而简便的新途径。
This paper is the third one for establishing a more reasonable heterojunction model. A new method is presented to alone solve Poisson's equations without adopting 'the depletion approximation' and 'guasi-equilibrium condition'. Therefore, a more strict and simple way can be selected when the heterojunction characteristics in the space-charge region are designed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1994年第2期116-120,共5页
Research & Progress of SSE