摘要
提出了一种低温金属单向诱导横向晶化的多晶硅薄膜晶体管(LT_MIUCpoly_SiTFT)的技术.使用该技术可在大面积廉价玻璃衬底上制备出高迁移率、低漏电电流、具有较好均匀性的多晶硅器件.在进一步的研究中,设计了一种新型的栅控轻掺杂漏区(GM_LDD)结构,有效地解决了在较高源漏电压下的栅诱导漏电问题.使得LT_MIUC poly_SiTFT更适用于高质量的有源矩阵显示器.
In this paper the low-temperature metal-induced unilaterally crystallized (MIUC) polycrystalline silicon thin-film transistors (TFTs) have been developed and characterized. These TFTs have higher field-effect mobility, lower off-state current and better spatial uniformity. A new structure of gate-modulated lightly doped drain of TFT was proposed. It is very effective to lower gate-induced drain-leakage current of the TFTs when a higher source drain voltage is applied to it. This type MIUC TFT is suitable to fabricate active matrices for liquid crystal and organic light-emitting diode flat-panel displays on large area glass substrates.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第7期3363-3369,共7页
Acta Physica Sinica
基金
国家高技术研究发展计划(批准号:2004AA303570)
国家自然科学基金(批准号:60437030
60077011)
国家出国留学人员回国基金
香港RGC资助的课题.~~
