摘要
从实际的晶体硅太阳电池电路基本方程出发,推导出晶体硅太阳电池最大功率下负载的函数表达。与传统的电工电路不同,太阳电池电路最大功率点下的负载大于太阳电池内阻,并随着温度的升高,其比值逐渐降低。实验结果与理论吻合。
Based on the equation of silicon solar cell current intensity, the theoretic expression of silicon solar cell load resistance at maximum power point is deduced. Not consistent with the normal electronical circuit, the load resistance is larger than the series resistance. And the ratio descends along with the ascendance of temperature. The experimental results agree with the theoretical predicts well.
出处
《中国工程科学》
2005年第6期45-49,共5页
Strategic Study of CAE
基金
国家自然科学 (青年 )基金资助项目 (5 90 0 64 87)
关键词
晶体硅太阳电池
最大功率
负载
silicon solar cell
maximum power
load resistance