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低掺磷YP_xV_(1-x)O_4单晶的生长与性能

Growth and characterization of low P dopant concentrations YP_xV_(1-x)O_4 single crystal
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摘要 用提拉法生长了四方锆石型YPxV1-xO4(x≤0.15)晶体.对晶体中P元素浓度的测定结果表明,YPxV1-xO4单晶可以按化学计量比生长.测定了晶体的晶胞参数、折射率和激光损伤阈值.晶体在400~3000nm波长范围的透过率达到80%且无吸收峰,而且,晶体几乎不发出荧光.综合各项测试结果可以推论:YPxV1-xO4晶体适于作为稀土离子的激光基质晶体. Tetragonal zircon-type YP_xV_(1-x)O_4 (x≤0.15) single crystal has been pulled using the Czochraski method from YVO_4-YPO_4 solid-phase system. The analytic result for the concentration of P element indicates that YP_xV_(1-x)O_4 single crystal can be grown with stoichiometric compositions. The crystal lattice parameters, refractive index and the optical damage threshold were tested. The transparency of crystal is close to 80% in wavelength 400-3?000?nm and absorption peak is not exist. In addition, the fluorescence emission of crystal is low. The test results illustrate that YP_xV_(1-x)O_4 (x≤0.15) single crystal can be used as laser host crystal of rare earth ions.
出处 《福州大学学报(自然科学版)》 CAS CSCD 北大核心 2005年第3期374-378,共5页 Journal of Fuzhou University(Natural Science Edition)
基金 福建省自然科学基金计划资助项目(项目编号:E0310009)
关键词 Czochraski法 YPxV1-xO4晶体 折射率 透过率 晶胞参数 激光损伤阈值 Czochraski method YP_xV_(1-x)O_4 single crystal refractive index transparence lattice parameters optical damage threshold
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