摘要
化学机械抛光是用于获取高级别的局部平面度和整体平面度的制造过程,综合了化学作用和机械作用。它的机械切除行为包含了流体动力作用。通常在化学机械抛光中使用纳米尺度的粒子来加速抛光速度并优化其平面度。通过求解考虑应力偶效应的润滑方程可取得其机理的认识。耦合线松驰技术和多重网格全网格近似手段可加速此润滑方程的收敛。用计算机模拟了不同参量对承载能力和转矩的影响作用。
Chemical mechanical polishing (CMP) is a manufacturing process used to achieve the high levels of global and local planarity required, which involves a combination of chemical erosion and mechanical action, and the mechanical removal action of CMP involves hydrodynamic lubrication. Currently, the slurries used in CMP usually contain particles at naml scale to accelerate the removing ratio and to optimize the planarity. It will shed some insights into the mechanism to solve the lubrication equation of CMP with couple stress effect considered. Full approach scheme of multigrid technique incorporated with line relaxation is introduced to accelerate the convergence. The effects on load and moments resulted from variation parameters are simulated and computational results are given.
出处
《计算力学学报》
EI
CAS
CSCD
北大核心
2005年第2期160-164,共5页
Chinese Journal of Computational Mechanics
基金
国家自然科学基金(50390060)资助项目.
